- short-gate FET
- полевой транзистор с коротким затвором
The New English-Russian Dictionary of Radio-electronics. F.V Lisovsky . 2005.
The New English-Russian Dictionary of Radio-electronics. F.V Lisovsky . 2005.
Insulated-gate bipolar transistor — The insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device, noted for high efficiency and fast switching. It switches electric power in many modern appliances: electric cars, variable speed refrigerators, air… … Wikipedia
MOS-FET — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
MOS-Fet — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
Dual-Gate-MOSFET — Der Metall Oxid Halbleiter Feldeffekttransistor (englisch: metal oxide semiconductor field effect transistor, MOSFET auch MOS FET, selten MOST) ist eine Variante der Feldeffekttransistoren mit isoliertem Gate (IGFET), genauer der Metall Isolator… … Deutsch Wikipedia
Double-gate transistor — A double gate transistor is a field effect transistor (FET) fabricated with gate structure, to control the conductivity of the transister, on both sides of the channel. In a field effect transistor, the gate controls flow of electricity through… … Wikipedia
Common gate — Figure 1: Basic N channel common gate circuit (neglecting biasing details); current source ID represents an active load; signal is applied at node Vin and output is taken from node Vout; output can be current or voltage In electronics, a common… … Wikipedia
Insulated Gate Bipolar Transistor — Transistor bipolaire à grille isolée Symbole usuel de l’IGBT Le transistor bipolaire à grille isolée (IGBT, de l’anglais Insulated Gate Bipolar Transistor) est un dispositif semi conducteur de la famille des transistors qui est utilisé comme… … Wikipédia en Français
Insulated gate bipolar transistor — Transistor bipolaire à grille isolée Symbole usuel de l’IGBT Le transistor bipolaire à grille isolée (IGBT, de l’anglais Insulated Gate Bipolar Transistor) est un dispositif semi conducteur de la famille des transistors qui est utilisé comme… … Wikipédia en Français
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
Cascode — The cascode is a two stage amplifier composed of a transconductance amplifier followed by a current buffer. Compared to a single amplifier stage, this combination may have one or more of the following advantages: higher input output isolation,… … Wikipedia
Mathematics and Physical Sciences — ▪ 2003 Introduction Mathematics Mathematics in 2002 was marked by two discoveries in number theory. The first may have practical implications; the second satisfied a 150 year old curiosity. Computer scientist Manindra Agrawal of the… … Universalium